发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To identify distinctly the positions at both side ends of reference markers for positioning formed on a substrate by removing preliminarily the photoresist film on the reference markers for positioning. CONSTITUTION:An opaque film 28 consisting of aluminum is etched away by phosphoric acid (H3PO4) with a photoresist film 29 as a mask. A photomask 31 is further installed on the substrate and UV rays are irradiated thereon to expose a photoresist film 27 and thereafter the film 27 is removed by development, then a lower conductive layer 26 consisting of copper is removed by an ion etching method, etc. A lower thermoset photoresist film 25 is removed by using an ion milling method in succession thereto. The reference markers 23 for positioning are thereby formed without having the thick thermoset film 25 and the opaque film 28 thereon. The easy and exact mask alignment of the reference patterns 17 for positioning of a photomask 16 for forming the frame-shaped pattern of fine coils to the markers 23 is thus made possible.
申请公布号 JPS6111913(A) 申请公布日期 1986.01.20
申请号 JP19840132577 申请日期 1984.06.26
申请人 FUJITSU KK 发明人 HATA KUNIO;KAKEHI AKIRA
分类号 G11B5/31;H01L21/027;H01L21/306;H05K3/06 主分类号 G11B5/31
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