| 摘要 |
PURPOSE:To obtain a highly integrated semiconductor device in a structure; wherein the control part and the main driving part can be insulated in a DC way in a monolithic structure, the main driving part can be controlled even when the potential thereof is in a floating state, and moreover, the control current can be lessened; by a method wherein specific first - fourth regions and specific first - fourth electrodes are respectively provided in the main surface 9 of one side of the semiconductor device. CONSTITUTION:In case the potential A2 of terminals G3 and G4 is lower than that of a terminal B2, a p channel is formed in the surface of an nB region 15 under a third electrode 33 and positive holes flow into a pB region 13 from a pE<-> region 16. As a result, an injection of electrons into the pB region 13 from an nE region 14 is promoted, the nEpBnB transistor part is turned to ON and electrons flow into the nB region 15. Accordingly, after that, an injection of positive holes into the nB region 15 from the pE<-> region 16 is promoted and the pEnBpE transistor part is turned to ON. As the collector currents of the nEpBnB transistor part and the pEnBpE transistor part mutually become the base current of the other transistor part, a positive feedback is generated, and finally, both transistor parts result in being turned to ON as a thyristor pEnBpBnE. |
