| 摘要 |
PURPOSE:To form a single crystal silicon layer at a high crystal quality-level easily by indirectly heating and melting a nonsingular crystal semiconductor layer uniformly and solidifying the heated nonsingular crystal semiconductor layer from a contact section with a silicon substrate. CONSTITUTION:An SiO2 film 22 is formed onto a silicon substrate 21 and patterned, and a nonsingular crystal silicon film 23 is applied onto the SiO2 film 22 through a CVD method. The surface of the nonsingular crystal silicon film is oxidized at a high temperature to shape an SiO2 film 24, and an Si3N4 film 25 and a polycrystalline silicon film 26 are all applied onto the film 24 through the CVD method. Consequently, a CW argon laser is projected and scanned from an upper surface on which the cap layer 26 is applied. Accordingly, the nonsingular crystal silicon film is heated uniformly, and the setting of the conditions of beam annealing is made easier than conventional methods, thus preparing a single crystal silicon film at a high quality level having an insular constant crystal orientation with excellent reproducibility. |
