| 摘要 |
PURPOSE:To improve the dissolving speed of the resist polymer of the lower layer as well as to reduce the deterioration in quality of image due to the interaction of a pattern part by a method wherein the thin polymer resist of the upper layer is cooled quickly after baking. CONSTITUTION:The first layer of resist 3 is coated on the surface of the film 2 to be processed on a substrate 1 in sufficient thickness with which the effect of stepping can be neglected. Subsequently, said resist layer is baked at the prescribed temperature for the prescribed period of time. Then, the second layer resist 4 to be used for high resolution patterning is coated on said resist 3. Subsequently, a baking is performed again on the second layer resist 4 under the designated baking conditions, and a resist film is completed. Then, a necessary part is exposed 5 using a suitable light source of exposure. After the second layer resist is developed and the desired pattern in vertical profile is obtained on the first layer resist, a baking is performed again, and the above is immediately cooled quickly to room temperature. As a result, the solubility of the first layer resist is improved, and the range of selectivity of developing solvent is made wider, thereby enabling to control the profile properly. |
