| 摘要 |
PURPOSE:To obviate the electrostatic breakdown of a mask pattern by forming a metallic silicide layer and light shieldable metallic film on a amorphous silicon film. CONSTITUTION:This photomask blank consists of the light transmittable substrate, the amorphous silicone film formed on the substrate, the conductive layer consisting of the metallic silicide formed on the amorphous silicon film and the light shieldable metallic film formed on the metallic silicide layer. The light shieldable metallic film consists preferably of Cr, W, Ni or Mo and the metallic silicide layer consists preferably of the silicide of said metals. Since the metallic silicide layer has the conductivity of 10<-4>OMEGA.cm order equiv. to the conductivity of an ITO film, the static electricity generated in the state of contact exposing with a water escapes through the conductive metallic silicide film and therefore the electrostatic breakdown of the mask pattern is obviated. |
