| 摘要 |
PURPOSE:To cause a single crystal conductive film to grow efficiently over the whole surface of a single crystal insulation film, utilizing the mixing effect of semiconductor ions, by applying the semiconductor ions to a vapor-deposited metal film through the ionizing deposition. CONSTITUTION:A single crystal spinel film 5 is cleaned with hot phosphoric acid. Thereafter, an Ni film 6 of a thickness of about 1,000Angstrom is deposited on the spinel film 5 at room temperature and under a high vacuum. Si is then ionized up to a rate of ionization of several percent. This ionized silicon, S<+> is accelerated to ion energy of about 5KeV and applied to the whole surface of the Ni deposit film 6 through the ionizing deposition while the temperature of the films 5 and 6 is maintained at an appropriate temperature, so that Ni silicide is caused by the mixing effect of Si<+> to epitaxially grow on the whole surface of the spinel film 5. Thus, a single crystal Ni silicide film 7 is formed as a single crystal conductive film. In this manner, a semiconductor device 8 consisting of a spinel film 5 and an Ni silicide film 7 is produced. |
