发明名称 MONOLITHIC IC
摘要 PURPOSE:To reduce the variability in output logical amplitude of a logical circuit while the high speed of circuit action is maintained by a method wherein the slit width of the aperture of the transistor at a constant current section is set larger than the slit width of the aperture of the transistor at a current switching section. CONSTITUTION:The slit width WE1 of the aperture 12 determining the emitter area of the transistor used by the current switching section is set at 1.0mum as the result of a micro fabrication technique, and the variability in slit width WE1 during manufacture is set at + or -0.5mum. As a result, the finished slit width WE1 is 0.5-1.5mum. The slit width WE2 of the aperture 22 determining the emitter area of the transistor at the constant current section is set at 5.0mum so that the influence of a manufacturing variability of + or -0.5mum may become small, and the slit length is equalized with that of the transistor at the current switching section. As a result, the range of variability in slit width WE2 of the transistor at the constant current section is 4.5-5.5mum, and the emitter area varies in a range of + or -10% to the design medium value. Besides, the VF characteristic comes to an end with a variabitlity of approx. + or -3mV, which is a satisfactory tolerance value.
申请公布号 JPS6110267(A) 申请公布日期 1986.01.17
申请号 JP19840131468 申请日期 1984.06.26
申请人 NIPPON DENKI KK 发明人 MISAWA HIROYUKI
分类号 H01L21/331;H01L21/8222;H01L27/082;H01L29/73;H03K19/086 主分类号 H01L21/331
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