| 摘要 |
PURPOSE:To facilitate the setting of a short recording wavelength of an MR head and to perform high-density recording by forming an insulating layer of a magnetoresistance element-forming part with a thin film layer, and forming the insulating layer on the other part with a thick film layer in forming the magnetoresistance element, other magnetic poles, and connecting conductors on a substrate through the insulating layer. CONSTITUTION:A photoresist 23 is coated on an insulating film 21 except a zone 22 where about several tens of MR elements are formed, and an SiO2 film 21' on the zone 23 is removed by a well-known photolithographic technique. Then an insulating film 24 of SiO2 is again coated in hundreds -5,500Angstrom thickness on the whole surface by sputtering. Accordingly, the upper limit of the thickness of the insulating film 24' on the zone 22 is set to about 5,500Angstrom at this time. After said manufacturing stages, an MR head having several tens of heads can be obtained in the same way as before. Consequently, a magnetic shielding gap (g) between MR elements 25, 25, etc. and a substrate 20 can be sufficiently reduced and set precisely, and the extremely precise insulating film 24' can be made. |
