| 摘要 |
PURPOSE:To form a thin film on the surface of a substrate by a plasma chemical vapor phase growing method at a high rate of deposition without damaging the substrate by applying a megnetic field parallel to the substrate. CONSTITUTION:A pedestal 101 as a cathode is placed in a reactor 107, and a substrate 103 is put on the pedestal 101. Anodes 102 are placed on both sides of the substrate 103, and magnets 104, 105 are placed at both ends of the pedestal 101 to produce a magnetic field on the surface of the substrate 103 with lines of magnetic force 106. Gaseous monosilane and ammonia are fed as reactive gases, and glow dischrge is caused by applying high DC voltage between the anodes 102 and the cathode 101 to deposite a silicon nitride film on the substrate 103. Thus, a silicon nitride film can be formed at a high rate of deposition without damaging the surface of the substrate 103. |
