| 摘要 |
A method of low-damage, anisotropic etching of substrates including mounting the substrate (68) upon the anode (52) in a DC plasma reactor (10) and subjecting the substrate (68) to a plasma of low-energy electrons and a species reactive with the substrate (68). An apparatus (10) for conducting low-damage, anisotropic etching including a DC plasma reactor (14), a permeable wall hollow cold cathode (32), and anode (52), and means (54) for mounting the substrate (68) upon the anode (52). |
