| 摘要 |
PURPOSE:To enable an Al or Al alloy ohmic electrode to be fitted easily to an N type layer, by forming on the surface of the N type layer a layer of alloy selected from Si, Ge, Sn, Se and Te. CONSTITUTION:An N type layer 2 of a semiconductor compound of the group IIor V is provided on the surface thereof with a thin film 4 of Si, Ge, Sn, Se or Te of a thickness of 1,000-2,000Angstrom by the deposition or spattering. Subsequently, a protective film 5 is formed on the surface of the film 4 by the chemical reaction of a compound containing SiO2 or the like or the spin coating, in order to prevent said thin film material or the components of the N type layer from being evaporated. The structure is then heat treated at a temperature of 700-900 deg.C in the inactive atmosphere of N2, Ar or the like for 10-30min, whereby the thin film material is diffused in th proximity of the interface between said thin film and the N type layer and forms an alloy layer 6. The protective film 5 and the thin film material 4 are subsequently removed by etching, and then an Al layer 8 is deposted thereon. This structure is finally heat treated a temperature of 400-500 deg.C in the atmosphere of inactive gas. Thus, a desirable Al ohmic electrode 8' can be obtained. |
