发明名称 FORMING METHOD OF WIRING
摘要 PURPOSE:To improve the reliability of wiring, by using a common resist pattern, alternately depositing the insulating film of the first deposited film and the wiring metal of the second deposited film, performing only one lift OFF, thereby forming the wiring very simply. CONSTITUTION:A resist pattern 2 is formed on a ground layer 1, which is a substrate. The resist pattern 2 has a hole 3 corresponding to a wiring pattern in an area, where wiring is formed. On the upper side of the resist pattern 2 including the hole 3, the first deposited film, e.g., an insulating film 4, is deposited by a depositing method with less directivity. Then the second deposited film, e.g., a wiring metal, is deposited by a depositing method with high directivity. At this time, the wiring metal 5 is deposited in the vertical direction with respect to the surface of the substrate by an electron beam evaporating method as shown by wiring metal parts 5a and 5b on the insulating layer parts 4a and 4b, respectively, for example platinum is evaporated. When the resist pattern 2 is dissolved and the lift OFF is performed, the wiring metal part 5b on the insulating film 4b is formed as the metal wiring.
申请公布号 JPS618951(A) 申请公布日期 1986.01.16
申请号 JP19840130403 申请日期 1984.06.23
申请人 OKI DENKI KOGYO KK 发明人 SANO YOSHIAKI
分类号 H01L21/3205;H01L21/768 主分类号 H01L21/3205
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