| 摘要 |
PURPOSE:To implement high integration, by providing a contact hole for the source of a transistor and a power source wiring so that the hole reaches a substrate and a well region through the junction of a source, and commonly using the contact for providing the potentials of the substrate and the well and for imparting a potential to the source of the transistor. CONSTITUTION:A contact hole 8b, which is provided in the source of a transistor is exposed by photolithography. Silicon is etched so that the hole reaches a (p) well and a substrate region through the junction of a source. Then aluminum is deposited. Patterning is performed by photoetching. An aluminum wiring 11 is formed. A covering passivation film is formed, and the device is completed. Thus the contact for providing potentials of the well and the substrate is commonly used for the source of the transistor. Thus, the substrate, which has been used up to now, a diffused layer for providing the potential of the well, the contact and the aluminum wiring can be omitted. The high degree of integration of the circuit can be implemented. |
