发明名称 SEMICONDUCTOR DYNAMIC VOLUME SENSOR AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To suppress leak current to improve reliability. SOLUTION: Beam structures are placed at positions with predetermined distances on an upper face of a substrate and have movable electrodes. Fixed electrodes 9a to 9d and 11a to 11d are placed oppositely to sides of the movable electrodes, while lower electrodes are formed in a region opposite to the beam structures on the upper face of the substrate 1. A laminate comprising a lower layer insulator film, a conductive film and an upper layer insulator film is placed on the upper face of the substrate 1, a wiring pattern 22 of the fixed electrodes 9a to 9d and 11a to 11d is formed of the conductive film, and also the lower electrode is formed of the conductive film. The wiring pattern 22 and the fixed electrodes 9a, 9b, 11c, 11d are electrically connected through an opening 30 and an anchor 28a of the fixed electrodes 9a to 9d and 11a to 11d, while the lower electrode and the beam structures are electrically connected through the opening on the upper layer insulator film and anchors of the beam structures.</p>
申请公布号 JPH09211022(A) 申请公布日期 1997.08.15
申请号 JP19960019192 申请日期 1996.02.05
申请人 DENSO CORP 发明人 YAMAMOTO TOSHIMASA;AO KENICHI;TAKEUCHI YUKIHIRO
分类号 G01P15/125;B81B3/00;B81B7/00;B81C1/00;G01C19/56;G01P15/00;G01P15/08;G01P15/13;H01L29/84;(IPC1-7):G01P15/125 主分类号 G01P15/125
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