| 摘要 |
<p>PROBLEM TO BE SOLVED: To measure the dosage distribution of the ion implanting simply, by radiating positive electrons to a semiconductor substrate, and measuring the sort and the of amount of the hole defects generated by the ion implanting, from the life of the positive electrons in the substrate. SOLUTION: A measuring device furnishes a positive electron beam source 1 and a lead slit 2 to collimate the positive electrons discharged from the beam source 1. A lead slit 4 is provided also at the rear surface side of an Si substrate S, and only aγray generated by radiating the positive electrons in the substrate S is led in a specific direction. Near the side of the positive electron beam source 1, and the rear side of the lead slit 4,γray detectors 5 and 6 are provided respectively. The output signals of theγray detectors 5 6 are input to a life measuring circuit 7. This life measuring of the positive electrons is carried out at the points of the Si substrate S, by the movement of the Si substrate S by a scanning mechanism 3. The component analysis is carried out to the obtained measuring data of the positive electron life, so as to obtain the sort and the amount of the hole defects in the surface of the Si substrate S, that is, the ion implanting dosage distribution.</p> |
