| 摘要 |
PURPOSE:To coat and remove easily a resin layer in a short time and to make a coating temperature low without requiring an expensive facility, by coating a semiconductor substrate with heat-resisting resin such as polyimide which can be easily coated after depositing metal electrodes and which can protect the metal electrodes effectively. CONSTITUTION:After a P-N junction 4 is formed on a semiconductor substrate 1, metal electrodes 5, 6 are deposited using sputtering or evaporating. Heat- resisting resin such as polyimide of several drops are dripped while rotating the semiconductor substrate. Next, the substrate is heat-treated at about 250 deg.C to harden the liquid polyimide, forming a protective film thereon. Next, after the substrate is heat-treated at about 480 deg.C to make the electrode metal and the semiconductor crystal eutectic, the substrate is immersed in liquid such as hydrazine hydrate or ethylenediamine to resolve away the protective film. |
