| 摘要 |
PURPOSE:To form a wiring pattern having a fine width, by depositing the first film by a depositing method with less directivity, then depositing the second film with high directivity, performing lift OFF, etching the lower first film part with the second film part as a mask, thereby enhancing the forming accuracy of the first film part. CONSTITUTION:A resist pattern 2 is formed on the ground layer 1, which is a substrate. The resist pattern 2 has a hole 3 of the pattern corresponding to a wiring pattern in a region where the wiring is formed. A first film 4 is deposited by a depositing method with less directivity on the upper side of the resist pattern 2 including the hole 3. Then, a second film 5 is deposited by a depositing method with high directivity. The resist pattern 2 is dissolved and lift OFF is performed. With the second film part 5b comprising nickel as a mask, the sputtered film comprising tungsten, i.e., the first film part 4b, which is protruded from the mask, is etched away and trimmed. Thus the accurate metal pattern having a fine pattern width (less than 1mum) is obtained. |
