| 摘要 |
PURPOSE:To simply make film formation speed equal if right and left semiconductor layers have different film formation speed by varying the capacity of a condenser connected in series to a separated electrode since this can greatly vary the film formation speeds of the right and the left semiconductor layers. CONSTITUTION:RF electrodes 1a, 1b are two metal plates placed in parallel on both sides of an insulation material 2 and each metal plate is connected in series to condensers which are adjusting means of RF, e.g., a fixed condenser 6b and a variable condenser 6a outside a reactor. On both sides of the RF electrodes 1a, 1b, a pair of grounded electrodes 3a, 3b are placed in parallel with the RF electrode surfaces and on the electrodes 3a, 3b, substrates 4a, 4b are placed. The RF electrodes are electrically divided in two and at least one of the RF electrodes is connected to the RF adjusting means in series. This enables to form a film on both sides of the RF electrodes 1a, 1b and even if film formation speeds on both sides are different, the film formation speeds can arbitrarily be adjusted by adjusting the RF adjusting means. |
