| 摘要 |
PURPOSE:To simplify the manufacturing processes extremely in comparison with the case requiring the conventional zinc diffusing processes and to shorten the manufacturing time period, by incorporating an inner-current constrictive layer by two epitaxial growths. CONSTITUTION:A p-GaAs substrate 1 is prepared and mesa-stripe shaped first and second protruded parts 2 and 3 are formed. The widths W1 and W2 of the parts are set at the optimum values corresponding to the applications of a laser array to be manufactured. The interval between both protruded parts 2 and 3 is determined so that two laser elements are formed and separated to each other. Then, an n-GaAs layer 6 as a current constriction layer is grown on the substrate 1 having the protruded parts and recess parts by isotropic epitaxial growing. Since the GaAs layer 6 is epitaxially grown in an isotropic mode, the layer is laminated with the same thickness on the surfaces 4a-4e of the substrate 1. In the GaAs layer 6, diffusion of minority carriers caused by oscillated light is prevented, and the function of the current constriction can be imparted. |
