| 摘要 |
<p>A semiconductor memory has a number of memory cells located at the crossing points of a plurality of bit lines (8) and a plurality of word lines (2). Each of the memory cells consists of an information storing element such as a didode (3,4) or a fuse (11) and a PNP transistor connected in series. An N type epitaxial layer (2) is used as the word line and a P type semiconductor substrate (1) of the memory is used as a common collector output line for all the cells.</p> |
