| 摘要 |
<p>Disclosed is a method of forming a precision integrated resistor element (10-12) on a semiconductor wafer whose resistance value accurately corresponds to its nominal design value. The method comprises forming a resistor body (10) in combination with a test resistor structure (20-27) by conventional ion implantation or diffusion of suitable dopant in selected regions of the wafer. Then, by measuring th6 resistance(s) and width(s) of the test structure the variation Ap, in sheet resistance and variation AW in width due to process and image tolerances, respectively, are determined. Next, using Ap, and AW, the adjustment in length AL necessary to match the resistance of the resistance element (10-12) with the nominal design value is calculated. Finally, this information (AL) is supplied to an E-beam generating system to expose an E-beam sensitive contact level layer formed on the resistor body to form metal contact openings for the resistor body at a separation (L+AL) which provides a resistor having a resistance value corresponding to the design value.</p> |
