| 摘要 |
PURPOSE:To obtain a resist material having high sensitivity, high heat resistance and superior dry etching resistance and suitable for use in the formation of a semiconductor pattern having a high degree of integration by polymerizing 7,8- dialkoxycarbonyl-7,8-dicyanoquinonedimethane. CONSTITUTION:The resist material having constituent units represented by the formula (where R is 1-8C alkyl) is obtd. by polymerizing 7,8-dialkoxycarbonyl- 7,8-dicyanoquinonedimethane. When the resist material is patternwise irradiated with high energy beams such as electron beams, ion beams, X-rays or (far) ultraviolet rays, a prescribed fine pattern can be formed. The resist material has superior dry etching resistance, heat resistance and high sensitivity and is suitable for use in the formation of a semiconductor pattern having a high degree of integration. |
