发明名称 |
Single-crystal semiconductor devices and method for making them |
摘要 |
A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to melt the region and then solidifying the molten region from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction to form a single-crystal seed in the region. An operating layer of polycrystalline or amorphous material on the substrate in contact with the seed is scanned with a beam of electrons having a strip-like configuration. The beam remelts a portion of the seed and creates a molten zone in the layer that recrystallizes as a single crystal by lateral epitaxial recrystallization from the seed.
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申请公布号 |
US4564403(A) |
申请公布日期 |
1986.01.14 |
申请号 |
US19840574571 |
申请日期 |
1984.01.27 |
申请人 |
SONY CORPORATION RESEARCH CENTER |
发明人 |
HAYAFUJI, YOSHINARI;SAWADA, AKASHI;USUI, SETSUO;SHIBATA, AKIKAZU |
分类号 |
C30B13/22;C30B13/34;H01L21/20;H01L21/263;(IPC1-7):H01L21/208 |
主分类号 |
C30B13/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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