发明名称 PROCESS FOR MAKING DIAMOND AND CUBIC BORON NITRIDE COMPACTS
摘要 <p>IMPROVED PROCESS FOR MAKING DIAMOND AND CUBIC BORON NITRIDE COMPACTS The high pressure/high temperature (HP/HT) process for making diamond or CBN compacts has been modified by placing partitions within the crystal mass before HP/HT processing. Pliable metal shapes are placed in a honeycomb pattern within a shield metal sleeve and a shield metal cup. The abrasive crystals within one set of the tubes and outside another set of the tubes is sintered, and a compact containing the tubes embedded therein results. This compact can be acid leached to give a plurality of small compacts which need little if any additional shaping. The partitions can also be left intact as chip arresters.</p>
申请公布号 CA1199184(A) 申请公布日期 1986.01.14
申请号 CA19820407014 申请日期 1982.07.09
申请人 GENERAL ELECTRIC COMPANY 发明人 GIGL, PAUL D.
分类号 B01J3/03;B01J3/06;B22F7/00;C04B35/52;C04B35/583;C04B35/5831;C22C1/05;E21B10/56;E21B10/567;(IPC1-7):B24D3/10 主分类号 B01J3/03
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