Method for depositing silicon carbide non-single crystal semiconductor films

摘要

A method of forming a silicon carbide non-single crystal semiconductor, characterized in that said method comprises the step of: applying electric or light energy to a methylsilane expressed by the formula of SiH4-n(CH3)n (where n=1 to 3) or Si2(CH3)nH6-n (where n=1 to 5) and a silane hydride (of SimH2m+2, where m=1 to 3), thereby forming a silicon carbide non-single crystal semiconductor film layer containing SixC1-x (where 0<x<1) as a major component thereof.