MANUFACTURE OF PHOTOCONDUCTOR

摘要

PURPOSE:To obtain a photoconductor having high sensitivity and high resolution without requiring heat treatment by forming an Si nitride layer onto an amorphous hydrogenated Si layer through a plasma CVD method. CONSTITUTION:An amorphous hydrogenated Si layer is shaped onto a conductive substrate through a reactive sputtering method in an atmosphere containing hydrogen as a reactive gas by using a target mainly comprising Si. An Si nitride layer is formed onto the amorphous hydrogenated Si layer through a plasma CVD method in an atmosphere containing the gases of nitrogen and hydrogenated Si. According to the manufacture, a photoconductor, through which excellent dark currents and persistence are both acquired, is obtained, and can be acquired without needing heat treatment.