| 摘要 |
PURPOSE:To enable a film carrier semiconductor device to be packaged with high reliability in the case of double-wiring, by realizing an approximately uniform thickness in the region where lead terminals are to be bonded, including the thickness of a wiring layer and that of a wiring substrate. CONSTITUTION:In the drawing, bonding region is indicated by dot-dash-lines 15. The bonding region is designed such that the total thickness including a substrate and leads becomes almost uniform for the purpose of stable bondability. In practice, the total thickness including the thickness of the substrate, the thickness of Cu and the thickness of solder resist has a deviation of + or -5mum at each lead 13, and thus it can be said the bonding region has an approximately uniform thickness. In the bonding region, a uniform load is applied to the leads 13 and 17 by applying a uniform load during bonding. The lead 17 is a Cu lead having a thickness of 35mum and plated with 0.5mum thick Sn, while the lead 13 is previously plated with 4mum thick Sn and with 0.5mum thick Au. Accordingly, when they are heated with a heater 19 and a stage 18, Au-Sn eutectic alloy is produced and they can be bonded easily. |
