METHOD OF FABRICATING CMOS TRANSISTOR,申请号KR19950065664-传众专利搜索

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发明名称	METHOD OF FABRICATING CMOS TRANSISTOR
摘要
申请公布号	KR0172530(B1)	申请公布日期	1999.02.01
申请号	KR19950065664	申请日期	1995.12.29
申请人	HYUNDAI ELECTRONICS IND. CO.,LTD	发明人	SON, YONG-SUN
分类号	H01L27/092;(IPC1-7):H01L27/092	主分类号	H01L27/092
代理机构		代理人
主权项
地址

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