发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURE THEREOF
摘要 PURPOSE:To form a light-emitting element, through which projecting beams having a small spread angle of beams are obtained, by forming the back of a substrate to a cylindrical lens shape. CONSTITUTION:The back of a P type InP substrate 11 is formed to a cylindrical lens shape. An InGaAsP active layer 12 having a band gap such as 0.95eV one (lambdag=1.3mum), an InGaAsP optical waveguide layer 13 having the band gap such as 1.2eV one (lambdag=1.0mum) and a layer 14, which consists of a semiconductor film such as an SiO2 film and a current injection region thereof is bored to a striped form, are shaped in the order. Electrodes 15, 16 composed of Au-Sn and Au-Zn are each formed. A diffraction grating for extracting projecting beams is formed to the optical waveguide 13, and primary diffracted beams are projected vertically in the direction vertical to the optical waveguide layer 13 when pitches are 3,900Angstrom long. Laser beams C are projected to the substrate side. Secondary diffracted beams contribute to laser oscillation on a distributed feedback type laser.
申请公布号 JPS616889(A) 申请公布日期 1986.01.13
申请号 JP19840127910 申请日期 1984.06.21
申请人 MATSUSHITA DENKI SANGYO KK 发明人 OONAKA SEIJI;SERIZAWA HIROMOTO
分类号 H01S5/00;H01S5/12;H01S5/183 主分类号 H01S5/00
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