| 摘要 |
PURPOSE:To prevent generation of hillock and avoid short-circuit between the first and second electrodes resulating from hillock by forming an aluminum film on a semiconductor substrate through an insulation film and then forming a solid solution consisting of Al, Si on said film. CONSTITUTION:After forming an insulation film 22 on a silicon substrate 21, an aperture 23 is formed. Next, pressure in the electrical furnace at, for example, 275 deg.C is exhausted to 50mTorr or less, tryisobutyl aluminum is supplied for 60min in order to form an Al film 24. Thereafter, silane, diborane, and H2 gases are supplied and the substrate is heated by the furnace temperature of 460 deg.C. As a result, a solid solution of Al-Si is formed at the surface of film 24, boron of interstitial atom is diffused and precipitated at the grain boundary of such solid solution and thereby the first Al electrode 25 in the quilibrium condition in energy can be formed. Thereafter, an aperture 26 is formed and an interlayer insulation film 27 is formed, followed by formation of a contact hole 28. Moreover, the second Al electrode 29 is formed on the entire part and it is connected to the first Al electrode 25. |
