| 摘要 |
PURPOSE:To increase the concentration of an emitter in a pnp transistor, and to obtain a high current amplification factor by newly adding an ion implantation process as the characteristics of a self-alignment system for a conventional emitter contact, etc. are left as they are. CONSTITUTION:A resist 77 is formed without considering allowance on a mask alignment, boron ions are implanted through only a nitride film 75, and an emitter 78 in a pnp transistor is shaped apart from the formation of an npn transistor, thus increasing the concentration of the emitter 78 in the pnp transistor. Consequently, the concentration of a base 65 can also be elevated, thus ensuring a high current amplification factor, then obtaining sufficiently high punch- through voltage even when base width is reduced in order to acquire the high current amplification factor. Since the concentration of the base 65 can be increased, base resistance can be reduced. Conventional characteristics in which a base contact, an emitter contact, etc. for the pnp transistor are self-aligned and density thereof is elevated are left as they are. |
