发明名称 |
METHOD AND STRUCTURE FOR INHIBITING EXTERNAL DIFFUSION OF DOPANT |
摘要 |
A method for inhibiting out-diffusion of dopants from polycrystalline or single crystal silicon substrates (12) of high speed semiconductor devices into metal silicide conductive layers disposed on the substrate comprises interposing a refractory metal nitride layer (18) between the doped silicon substrate (12) and the refractory metal silicide conductive layer (20). Dopant out-diffusion is further retarded, and contact resistance lowered, by adding a thin layer (16) of refractory metal between the refractory metal nitride layer (18) and the silicon substrate (12). <IMAGE> |
申请公布号 |
JPS616822(A) |
申请公布日期 |
1986.01.13 |
申请号 |
JP19850077600 |
申请日期 |
1985.04.13 |
申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORP |
发明人 |
MAIKERU II TOOMASU;MAJIYUKAARU BII BORA;ASHIYOKU KEI KAPUURU |
分类号 |
H01L21/22;H01L21/28;H01L21/285;H01L23/532;H01L29/43;H01L29/45;H01L29/49;H01L29/78 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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