| 摘要 |
PURPOSE:To reduce reactive currents while minimizing capacitance, and to unify a pnp transistor, which has high accuracy and operates at high speed, with a cross-over, which has low resistance and small capacitance and is proper to the increase of the speed of operation, and an npn transistor by isolating the side surface of a p type emitter in a vertical type pnp transistor by an insulating film. CONSTITUTION:In a pnp transistor, currents do not flow through a region on the right side of a p type emitter 113 because the right side of the emitter 113 is isolated by SiO2 and an insulating film 105. Consequently, reactive currents are reduced. The capacitance of a substrate has an effect only on the base to a collector in the pnp transistor because the side surface of the collector is coated with an insulating film, and the area of the base is small and capacitance thereof is small because a junction surface is formed in a flat plane in the base. Since a p type collector leading-out diffusion reion 111 can be shaped brought into contact with an isolation region, density can be increased while capacitance is reduced. Since a p type diffusion region 116 and an n type buried region 102: an epitaxial layer 104 are connected in parallel in a cross-over region, resistance is minimized. |
