| 摘要 |
PURPOSE:To obtain a current source improved at its temperature characteristics by adding a current mirror circuit for absorbing the variance of currents to a current source bias circuit. CONSTITUTION:The current source is formed by npn transistors (TRs) Q1-Qn and resistors R1-Rn and the bases of the TRs Q1-Qn are biased by pnp TRs Q11, Q15. The current mirror circuit for absorbing the variance of currents is formed by npn TRs Q16, Q17 and a current I02 having the same capacity as that of a current I01 flowing into the TR Q16 is mirrored to the TR Q17 side to constitute a power supply circuit to be used for a semiconductor integrated circuit. Consequently, the output current value I01 of the current source becomes I01=VBB/R1, which is determined only by the reference voltage source VBB and the emitter resistor R1 of the TR Q1. |
