发明名称 METHOD AND DEVICE FOR BIAS ION PLATING
摘要 PURPOSE:To prevent the surface of a substrate for vapor deposition from being flawed by electric discharge in the stage of depositing a film by ion plating to the substrate on which a bias voltage is impressed negative in a vacuum vessel by irraidating electron rays to said surface to neutralize the accumulated positive charge. CONSTITUTION:The substrate 17 is attached to a substrate holder 15 in a vacuum vessel 11 and plasma is generated in a vapor source 13 by the high-frequency discharge generated from a high-frequency oscillation coil 19 to ionize partly the evaportaing material from the source 13. The negative bias voltage is kept impressed to the holder 15 by a DC power source 35 in this stage to accelerate the ionized vapor in such a manner that the vapor collides against the substrate surface 17a thus forming the film deposited by evaporation. The positive charge accumulates on the surface 17a until the charge is discharged to make discharge traces on the surface for vapor deposition thereby deteriorating the quality of said surface, if the evaporating material is the insulating material such as SiO2 in this care. Thermion is therefore irradiated to the surface 17a to neutralize the accumulated positive charge, by which the generation of the discharge is prevented and the deterioration in the quality of the surface for vapor deposition by the discharge traces is prevented.
申请公布号 JPS616271(A) 申请公布日期 1986.01.11
申请号 JP19840125356 申请日期 1984.06.20
申请人 SHINKUU KIKAI KOGYO KK 发明人 MORITA SHINSAKU;DAIKUHARA SHIGEKI;ODAGIRI AKIRA
分类号 C23C14/32;(IPC1-7):C23C14/32 主分类号 C23C14/32
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