| 摘要 |
PURPOSE:To enable the uniform film thickness and quality to be obtained by a method wherein an auxiliary gas supply pipe which supplies the carrier gas to wafers from above a susceptor is provided in addition to a gas supply pipe which supplies the raw material gas provided at the center of the susceptor of doughnut form where wafers are mounted. CONSTITUTION:The nozzle part of the auxiliary gas supply pipe 17 is made opposed to wafers 10 mounted on the upper surface of the susceptor 9. For example, the nozzle 19 of the auxiliary gas supply pipe 17 is located in the middle of the supply pipe 17 between a nozzle 8 and a nozzle 8. A convection of gas generates in a reaction furnace 5 by the gas spouted out of adjacent nozzles 8 as shown by a two-point chain line, and this convection flows toward the center of the reaction furnace 5 about in the middle of adjacent nozzles 8. If the nozzle 18 of the supply pipe 17 is kept arranged at the position in the flow to the center, hydrogen spouted out of the nozzles 19 flows more toward the center of the reaction furnace 5 that at the position of the nozzles 19 by being influenced by the flow of gas convection; then, the uniformity of film thickness and film quality can be contrived. |
