发明名称 DRIVING METHOD OF SEMICONDUCTOR PRESSURE SENSOR
摘要 PURPOSE:To make the effect of fluctuation in current conduction as small as possible, by applying a pulse current, whose amplitude is larger than that of a rated current, to gage resistors formed in a semiconductor diaphragm when a power source is turned ON. CONSTITUTION:Gage resistors 3a-3d are formed in a semiconductor diaphragm. A bridge circuit BR is constituted of the resistors 3a-3d. When a power source is turned ON, a large current flows to the circuit BR through a capacitor C15 and a variable resistor R2. The resistors 3a-3d are heated, and the temperature of the entire diaphragm is quickly increased to a specified temperature. When the charging of the C15 is finished, a rated current I is supplied to the circuit BR through a constant current circuit 14. Thus the effect of the fluctuation in current conduction can be made as small as possible with respect to the output of a sensor at output terminals 6a and 6b.
申请公布号 JPS6177734(A) 申请公布日期 1986.04.21
申请号 JP19840200087 申请日期 1984.09.25
申请人 FUJIKURA LTD 发明人 OKADA KAZUHIRO;NURI KENJI
分类号 G01L9/04;G01L9/00;G01L9/06 主分类号 G01L9/04
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