发明名称 CLOSE-CONTACT TYPE IMAGE SENSOR
摘要 PURPOSE:To implement high density in a driving circuit, by providing a sensor substrate comprising a photoelectric conversion element, separately providing a driving substrate comprising a driving circuit, which drives said photoelectric conversion element, and forming the wirings and the like of respective substrates by thin films. CONSTITUTION:On a first ceramic substrate 1, a common electrode 2 and an individual electrode 5 are formed. On the individual electrode 5, a photoelectric conversion element with a P-I-N junction is formed with a thin film. A light transmitting common electrode 4 is formed on the photoelectric conversion element 3 and the common electrode 2. On a second ceramic substrate 8, a photoelectric-conversion-element driving circuit comprisin the following parts are formed by thin films: a driving IC6 for driving the photoelectric conversion element 3; an individual electrode 501, which is wire-bonded to the driving IC6; and a common electrode 201. Since the sensor substrate and the driving substrate are separately formed and connected, the yield rate is improved.
申请公布号 JPS614272(A) 申请公布日期 1986.01.10
申请号 JP19840124550 申请日期 1984.06.19
申请人 TOSHIBA KK 发明人 WATANABE ZENSAKU;CHIYOMA HITOSHI;KIDA KUNIAKI
分类号 H01L27/146;H01L25/16 主分类号 H01L27/146
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