| 摘要 |
PURPOSE:To form a metal wiring readily in a space, by removing a semiconductor or an insulator, which is provided in the vicinity of the metal wiring formed on the surface of the insulator and under the metal wiring by etching. CONSTITUTION:On a semi-insulating GaAs layer 1, SiO2 is deposited by a chemical vapor deposition method. A metal wiring 3, which connects an FET, a diode or an electronic circuit, is formed on said CVD SiO2 by, e.g., gold. Then, a part, where an SiO2 layer 2 is to be made to remain, is coated by a photoresist film 4. When etching is performed, the SiO2 beneath the photoresist film 4 and the SiO2 layer 2 beneath the metal wiring 3 are over-etched. When the photoresist film 4 is removed by an organic solvent, the metal wiring 3, which is supported by the SiO2 layer 2 in regions 50 and 60, is formed. In the metal wiring in such a space, a layer of air is inserted between a grounding surface and the metal wiring. Therefore, wiring capacity including fringing capacity can be reduced to the minimum value. |
