| 摘要 |
PURPOSE:To obtain highly reliable connection between layers through minute contact holes, by burying the contact holes with an organic solvent, in which a conducting material is dissolved, performing heat treatment, reducing resistance, and depositing an upper conductive layer. CONSTITUTION:After the formation of contact holes 8a and 9a, an organic solvent, in which a conducting material (e.g., a conducting organic metal) is dissolved, is applied by rotation. Thereafter, heat treatment is performed at a relatively low temperature, and the solvent is removed. Then the contact holes 8a and 9a are buried by an organic metal 11. Thereafter, sputter etching is performed by using argon Ar gas and the like, and the organic metal 11 on the upper surface of an SiO2 layer 4 is removed. Then, heat treatment is further performed and polymerization of the organic metal 11 is carried out so as to obtain stabilization. The contacting property of a polycrystalline Si layer 3 and an Si substrate 1 is enhanced. Then Al is deposited and connected to the polycrystalline Si layer 3 and the Si substrate 1 through the organic metal 11. |
