| 摘要 |
PURPOSE:To enable n type p type conductive layers to be selectively formed without causing any thermal damage to a substrate, by growing an n type III-V group compound semiconductor crystal by a liquid-phase epitaxial growth using tin as a solvent and an element forming this compound and a II-group element as dissolved substances, and diffusing the II-group element into a semiconductor crystal adjacent to the grown crystal, thereby forming a p type region. CONSTITUTION:As a solvent, tin is employed which enables a large degree of solubility of a III-group element and a V-group element which constitute of a III-V group compound semiconductor crystal at a relatively low temperature, and an appropriate amount of a II-group element which functions as an acceptor impurity for the III-V group compound semiconductor crystal, e.g., zinc, cadmium or magnesium, is added as a dissolved substance. Employment of this solution enables the growth temperature to be lowered to about 400 deg.C. The conductivity type of the LPE grown layer 9 thereby obtained is n type since it contains a relatively large amount of tin as an impurity. However, the above-mentioned II-group element is also contained in the LPE grown layer 9. Therefore, this II-group element is thermally diffused into a semiconductor substrate 2 or the like which is adjacent to the layer 9, whereby a p type conductive layer 10 can be formed adjacent to the n type grown layer 9. |
