| 摘要 |
PURPOSE:To reduce a leaking current from a p-n junction, which is formed on a silicon substrate, by forming a silicon layer, which has the same thickness as that of a gate oxide film, on the surfaces of the second conducting source and drain regions on the main surface of the first conducting type silicon substrate. CONSTITUTION:On the surface of an n<+> type source region (4a) and on the surface of an n<+> type drain region (4b), an n<+> type silicon layer (40a) and an n<+> type silicon layer (40b), which have about the same thickness as a gate film 3, are formed. Then, on the surface of a field oxide film 2, on the surface of the gate oxide film 3 and on the surfaces of the n<+> type silicon layers (40a) and (40b), an n<+> type polysilicon film 50 is formed. With photoresist films (60a) and (60b) as masks, etching is performed. When source and drain polysilicon wiring layers (50a) and (50b) are formed, the parts of the surfaces of (4a) and (4b), which are contacted with the gate oxide film 3, are not etched. Therefore the leak current from the p-n junction becomes small. |
