| 摘要 |
PURPOSE:To obtain the title device having good initial characteristics and a surface protection film which can alleviate the variation in electrical characteristics with time by providing a surface protection film made of an inorganic thin film deposited to the photoconductive region on the surface of a hydrogenated amorphous Si thin film at a temperature below the temperature to form the thin film, and then heat-treated. CONSTITUTION:The title device is provided with a surface protection film made of an inorganic thin film 4 deposited to the photoconductive region 5 on the surface of the amorphous Si thin film 2, and then heat-treated in this device of planar and sandwich structure including an electrode thin film layer 3 and the a-Si:H thin film 2 formed on a substrate 1. For example, a photosensor of planar structure is composed of a quartz glass substrate 1, an a-Si:H thin film 2 formed thereon, a comb-like Al electrode 3 and a surface protection layer 4 of Si nitride. Then, an inorganic thin film layer 4 is deposited on the thin film 2 in the photoconductive region and its periphery at a temperature below the temperature (about 250 deg.C) to form the thin film 2 by electron sychrotron resonance- plasma-CVD or the like. |
