| 摘要 |
PURPOSE:To obtain a radiation sensitive compsn. superior in heat and dry etching resistances as a resist high in sensitivity to light, X-rays, electron and ion beams by using a phenol resin contg. no low mol. wt. component in the radiation sensitive compsn. contg. a phenol resin and a dissolution inhibitor. CONSTITUTION:For example, a novolak resin is used and as the dissolution inhibitor, poly(2-methylpentene-1-sulfone) is used, and they are dissolved in isoamyl acetate to form a resist. A silicon oxide film 5 is formed on a silicon substrate 4, and the film 5 is coated with a resist film 6. The film 6 is irradiated with electron beams 18, developed with an aq. soln. of tetramethylammonium hydroxide, and further, the film 5 is dry etched in fluorine type plasma to form a hole 7. Denaturalization of the resist film using the resin A contg. no lower mol. wt. component of trimer or below is not found at all and no deformation of the hole is not found, too. |
