| 摘要 |
PURPOSE:To lessen the decrease in semiconductor characteristics due to the dispersion of a metal or a metal oxide for connection into a semiconductor, paticularly amorphous semiconductor by a method wherein a layer of specific thickness made of a kind of more of metal belonging to the V group and the Vgroup of the periodic table is provided between the semiconductor and the conductor. CONSTITUTION:A layer having a thickness of 50-1,000Angstrom preferably 50-500Angstrom made of a kind or more of metal belonging to the V group or the IV group of the periodic table is provided between the semiconductor and the conductor. V, Nb, Ta of the V-a group or Sb, Bi of the V-a group is used as a metal belonging to the V group of the periodic tale, and Ti, Zr, Hf of the IV-a group or Sn, Pb of the V-b group is used as a metal belonging to the IV group of the periodic table. The semiconductor may be any of P type, N type and intrinsic. The conductor requires no particular restriction if it is a conductor formed out of a metal other than metals belonging to the V group and the IV group of the periodic table and an oxide of them and connected for electrical connection of the semiconductor. |
