| 摘要 |
<p>PURPOSE:To obtain the chips having a stable quality by a method wherein a cutting process with a diamond blade as the first step is followed by a chemical etching for levelling unevenness of the cut faces and a holding film is then stuck to a back surface of the substrate to effect the second-step cutting. CONSTITUTION:A semiconductor substrate 1 is cut beyond a P-N junction by boundary lines among the chips with a diamond blade thereby forming the first cut grooves 8. Next, the cut faces are levelled by etching and the electrical and optical performances of the chips are checked up. Furthermore, a protective film on the front surface is removed by chemical treatment and a holding film 9 is stuck to the back surface. Then the substrate 1 is further cut toward the bottom plane from the cut grooves 8 up to such part that the chips can be separated easily and the second cut grooves 10 are formed. By such cutting, the next die bonding can be made by separating the chips by extending the holding film 9 similarly in the case of usual ICs and by adsorbing the chips with a collet or the like automatically as the chips are fixed firmly by adhesion to the holding film 9.</p> |
