| 摘要 |
PURPOSE:To improve the reliability of semiconductors by prevneting corrosion caused by permeation of water from the outside by convering a phosphorus glass film used for passivation film with a silicon nitride film. CONSTITUTION:After a field SiO2 film 2 and a phosphorus glass layer 3 are formed on an Si substrate 1 and the last Al wiring 4 is patterned, a phosphorus glass film 5 is further grown over the whole surface. Nextly, after a wiring lead- out part 9 is formed, the exposed phosphorus glass film 5 is removed by etching to open the first aperture. After a photoresist 7 is removed, an Si nitride film 6 is grown over the whole surface and the second aperture which is smaller than the first one in its aperture area is formed. Then the Si nitride film 6 is removed by etching and photoresist 10 is peeled. As a result, the phosphorus glass film 5 is completely covered with the Si nitride film 6 even in the wiring lead-out part. |
