发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To obtain a pad structure of high reliability having photo shielding property by a method wherein the external wiring lead-out part on the titled device is formed by laminating multilayer metal, so that the upper metallic layer becomes larger than the lower one in planar shape, and that the upper metallic layer may extend on the insulation film around the lower metallic layer, with its tip superposed on another metallic layer. CONSTITUTION:The first metallic layers 3 and 3' are formed on an insulation film 2 formed on the substrate 1, and a pad region 3 and a wiring 3' are made of these first metallic layers. Next, the insulation film of the pad region is removed by depositing an interlayer insulation film 4. The second metallic layer 5 is deposited thereon and then patterned larger than the pad region made of the first metallic layer by covering the part of having removed the insulation film, and the pad region is formed by laminating the first and second metallic layers. This construction improves the reliability against the mechanical impact generating at the time of connecting bonding wires to the metallic layers at the pad region. Besides, light does not come incident to the substrate around the pad, and a small area of the first metallic layer 3 that forms the pad region is enough, furthermore, the integration degree of chips increases.</p>
申请公布号 JPS613479(A) 申请公布日期 1986.01.09
申请号 JP19840124659 申请日期 1984.06.18
申请人 NIPPON DENKI KK 发明人 YAMAMOTO HIROMASA
分类号 H01L31/10;H01L31/02;H01L31/0203 主分类号 H01L31/10
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