发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain the stable titled device of wide operating margin by reducing the amount of noise by a method wherein the inductance of a reference potential is reduced by shortening the inner lead frame of the reference potential terminal and the enlarging its area. CONSTITUTION:The inner lead frame 4 of a reference potential is set at 1:1 or less in length to the lead frame 3 on the diagonal line and at 1:1 or more in the ratio of area by moving the center point of a cavity 2 from the center point of the package toward the reference potential terminal. This construction enables the noise generating at the reference potential by the capacitance coupling of the internal operating contact with the substrate 1 during the operation of the internal circuit to be reduced by a factor of a reduction in resistance L of the reference potential according to a formula dV=L.di/dt; therefore, the device of high stability whose input level, output level, and internal circuit operating margin have been enlarged can be obtained.
申请公布号 JPS613437(A) 申请公布日期 1986.01.09
申请号 JP19840124660 申请日期 1984.06.18
申请人 NIPPON DENKI KK 发明人 KOJIMA MICHIAKI
分类号 H01L23/50;H01L23/495;H01L23/64 主分类号 H01L23/50
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