| 摘要 |
<p>PURPOSE:To make a high-density picture element display without any trouble in manufacturing by arranging a couple of matrix substrates which have a thin- film transistor (TR) in the same pattern so that source electrode parts and domain electrode part face each other. CONSTITUTION:A gate part 32 is provided to a gate line in a projection state, and a semiconductor pad 34 is provided thereupon across an insulating layer; and a source line 35 is connected to its one terminal and a drain line 36 is connected to the other. The drain line 36 is connected to a transparent electrode 37. A light shield film 33 is formed on this FET and connected to the gate line through a contact hole. A couple of substrates 1 and 1a are arranged opposite each other across liquid crystal 10, and a source line 35 (35a) is opposed to the drain 37 (37a) of the opposite-side substrate and used as a counter electrode. An image is written by the upper and lower substrates alternately. Thus, a high- density picture element display is made relatively without trouble of manufacture.</p> |
